Silicon Carbide Wafer Laser Cutting Systerm-Semiconductor-Laser Etching Equipment|Wafer Dicing Equipment-Suzhou Delphi Laser Co., Ltd.

Silicon Carbide Wafer Laser Cutting Systerm

Uses ultra-short pulse laser to achieve high quality and high efficient cutting of silicon carbide wafer.

■ Specifications:

◆ Processing object: silicon carbide wafers

◆ Laser type: Infrared picosecond pulsed laser

◆ Cooling method: air-cooled

◆ X-axis: stroke 450mm, resolution 0.1μm

◆ Y-axis: stroke 700mm, resolution 0.1μm

◆ Z-axis：stroke 20mm，resolution 0.1μm

◆ θ axis: travel 120°, resolution 0.001°

◆ Maximum cutting thickness: 500μm

◆ Maximum speed of cutting axis: 500mm/s

◆ Processing size: 6 inches(upgradeable to 8 inches)

■ Applications

Aerospace and Power Electronics Industries.

Specifically designed for cutting wafers with silicon carbide (SiC) substrates used in microwave devices and power devices.

■ Samples