Laser-Induced Wafer Dicing System
This device is used to cut Mini LED wafers using stress-induced cutting technology.
■ Specifications
◆ Laser type: DPSS picosecond laser
◆ Laser power: ≥1W
◆ Cooling method: Closed-loop water cooling
◆ X-axis: 360mm travel length, 0.1μm resolution
◆ Y-axis: 300mm travel length, 0.1μm resolution
◆ Z-axis: 15mm travel length, 1μm resolution
◆ θ-axis: ±60° travel angle, 0.0001° resolution
◆ Scribing speed ≤ 1000mm/s
◆ Throughput of 4-inche wafer:15pcs/h@10*30mil (4-inche wafer)
◆ Applicable wafer size: 2 or 4 inches (can be outfitted to 6-inch wafers)
◆ Optional dual spot processing capability
■ Advantages
◆ Fast cutting speeds, pause-less process
◆ High production capacity and yield rates, stable performance
◆ No consumables, Low operating costs
■ Applications
Used for the wafer straight cutting of sapphire material substrate in the LED lighting industry, and straight cutting for sapphire materials in other industries.
■ Samples
For more information